| PART |
Description |
Maker |
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTH10N100 |
(IXTH10N100 / IXTH12N100) MegaMOS FET
|
IXYS Corporation
|
| IXTM20N60 IXTH20N60 |
MegaMOS FET
Discrete MOSFETs: Standard N-channel Types
|
IXYS Corporation
|
| IXTM12N90 IXTH12N90 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.90Ω的N沟道增强B>MegaMOSFET)
MEGAMOS FET
Discrete MOSFETs: Standard N-channel Types
|
IXYS Corporation
|
| BSS123LT3G BSS123LT1 BSS123LT1D BSS123LT1G BSS123L |
Power MOSFET 170 mAmps, 100 Volts N-Channel SO-23(170 mA, 100 V，N通道SOT3封装的功率MOSFET)
TMOS FET Transistor
|
ONSEMI[ON Semiconductor]
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB71040L_D ON2449 |
TMOS POWER FET 60 AMPERES 100 VOLTS
From old datasheet system
|
ON Semi
|
| RJK1003DPP-E0 RJK1003DPP-E0-15 |
N-Channel MOS FET 100 V, 50 A, 11 m
N-Channel MOS FET 100 V, 50 A, 11 m?
|
Renesas Electronics Corporation
|
| RJK1003DPN-E0-T2 RJK1003DPN-E0-15 |
N-Channel MOS FET 100 V, 50 A, 11 m
N-Channel MOS FET 100 V, 50 A, 11 m?
|
Renesas Electronics Corporation
|
| BUK581-100A |
PowerMOS transistor Logic level FET 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MTP27N10E MTP27N10E_D ON2571 |
From old datasheet system
TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
